Open Access

Development of Lift-off Process using Plasma-enhanced Chemical Vapor Deposition Silicon Dioxide

Yatish Prasad, Semiconductor Technology and Applied Research Centre, Dooravaninagar, Bengaluru, Karnataka, India. Chiranjeevi Lakavath, chiranjeevi.sitar@gov.in
Semiconductor Technology and Applied Research Centre, Dooravaninagar, Bengaluru, Karnataka, India.
H. M. Raghvendra, Semiconductor Technology and Applied Research Centre, Dooravaninagar, Bengaluru, Karnataka, India. Selvaraj, Semiconductor Technology and Applied Research Centre, Dooravaninagar, Bengaluru, Karnataka, India. B. Bhattacharyya , Semiconductor Technology and Applied Research Centre, Dooravaninagar, Bengaluru, Karnataka, India. P. Sathish Kumar Semiconductor Technology and Applied Research Centre, Dooravaninagar, Bengaluru, Karnataka, India.


J. Environ. Nanotechnol., Volume 9, No 2 (2020) pp. 04-07

https://doi.org/10.13074/jent.2020.06.202406

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Abstract

Lift-off is a simple, easy method for realizing metal patterns on a substrate, especially for thin metal films such as platinum, gold and titanium, difficult to be etched by conventional methods. Defining metal lines at sizes below 2 µm is difficult by wet and plasma chemistry. We have carried out lift-off process experiments using positive photoresist Fuji Film OiR 906-17HD, PECVD silicon dioxide of 1µm, and metal thickness of 1000, 1500 and 2000 µm on silicon and quartz wafers. Different dimensions of metal patterns were achieved with 3% accuracy on silicon and quartz wafers. This method can be used for the realization of various Micro-electro mechanical system devices.

 

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Reference


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